Deep level thermal evolution in Fe implanted InP

摘要

We report on the thermal evolution of the deep levels in Fe implanted and annealed InP. The position and nature of the dominant traps have been assessed by current-voltage-temperature measurements analyzed in the framework of the space-charge-limited current model. For low temperature annealing the conduction properties of the material are controlled by a damage-related donor located at E_c-0.21 eV. A deep donor-deep acceptor electrical compensation mechanism has been assessed after high temperature annealing. The dominant traps are located at E_c-0.55 eV and E_v + 0.72 eV. The latter is associated with the Fe~(2+/3+) center which is responsible for the semi-insulating properties.