The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium

摘要

H implantation in Ge was carried out at two substrate temperatures, room temperature (RT) and 150 ℃. The microstructure of the as-implanted Ge samples was studied by transmission electron microscopy and grazing incidence small-angle x-ray scattering. Small (001) and {111} platelets and {113} defects are nucleated at RT. For higher substrate temperature, microcracks, cavities, and platelike cavity clusters are created as well. The formation of these types of defects is ascribed to the interplay between dynamic and kinetic effects occurring during the implantation.