Effects of pretreatment processes on improving the formation of ultrananocrystalline diamond

摘要

Effects of pretreatment on the nuclei formation of ultrananocrystalline diamond (UNCD) on Si substrates were studied. Either precoating a thin layer of titanium (～400 nm) or ultrasonication pretreatment using diamond and titanium mixed powder (D&T process) enhances the nucleation process on Si substrates markedly, and the UNCD nuclei formed and fully covered the Si substrate, when deposition was processed using the microwave-plasma-enhanced chemical-vapor deposition process for 10 min. In contrast, during the same period, ultrasonication pretreatment using diamond powders (D process) can only form large UNCD clusters, which were scarcely distributed on Si substrates. The analyses using x-ray diffractometer, secondary ion mass spectroscopy, and electron spectroscopy for chemical analysis reveal that the titanium layer reacted with carbon species in the plasma, forming crystalline TiC phase, which facilitates the subsequent formation of UNCD nuclei. The beneficial effect of Ti layer on enhancing the nucleation of UNCD is presumably owing to high solubility and high diffusivity of carbon species in Ti materials, as compared with those of Si materials.