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首页> 外文期刊>Journal of Applied Physics >Alternating current susceptibility calculations for thin-film superconductors with regions of different critical-current densities
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Alternating current susceptibility calculations for thin-film superconductors with regions of different critical-current densities

机译:具有不同临界电流密度区域的薄膜超导体的交流电磁化率计算

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摘要

We present calculations of the alternating current (ac) susceptibility in rectangular thin-film type-II superconductors, based on the critical-state model and on the minimization of magnetic energy. First, we simulate a homogeneous superconductor and give an analytical approximate expression for both real and imaginary parts of the ac susceptibility as a function of the amplitude of the ac applied field. Second, ac susceptibility is calculated in a superconductor composed by two parts connected by a region of lower critical-current density. We find two peaks can appear in the imaginary ac susceptibility although, because of the strong demagnetizing fields, these peaks overlap in some cases. Detailed explanations of the imaginary part of the ac susceptibility are given.
机译:我们基于临界状态模型和磁能的最小化,给出了矩形II型矩形超导体中交流电(ac)的磁化率计算。首先,我们模拟均质超导体,并给出交流磁化率的实部和虚部的解析近似表达式,作为交流施加场振幅的函数。其次,在由两部分组成的超导体中计算交流磁化率,这两部分通过较低的临界电流密度区域连接。我们发现,在假想的磁化率中可能会出现两个峰,尽管由于强的去磁场,这些峰在某些情况下会重叠。给出了磁化率虚部的详细说明。

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