Oxygen precipitation in Czochralski silicon: Effect of ramped anneal from 300 to 750 ℃

Can Cui; Deren Yang; Xiangyang Ma; Ming Li

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Oxygen precipitation in Czochralski silicon: Effect of ramped anneal from 300 to 750 ℃

机译：直拉硅中的氧沉淀：退火温度从300升至750℃的影响

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The effect of ramped anneal (RA) in the temperature range between 300 and 750 ℃ on the formation of oxygen precipitates and their morphology in Czochralski silicon has been investigated. After ramping from 300 to 750 Tata rate of 1 ℃/min, the silicon samp

机译：研究了在300〜750℃温度范围内的斜退火（RA）对氧析出物的形成及其在切克劳斯基硅中的形态的影响。从1℃/ min的300 Tata速率升至750 Tata后，硅样品

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《Journal of Applied Physics》 |2008年第6期|990-993|共4页
作者
Can Cui; Deren Yang; Xiangyang Ma; Ming Li;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Effect of ramping anneals under inert or oxidizing ambient on the formation of oxygen precipitate denuded zone in nitrogen-doped Czochralski silicon wafers [J] . Xiangyang Ma, Daxi Tian, Longfei Gong, Physica Status Solidi. A, Applications and Materials Science . 2006,第8期

机译：惰性或氧化环境下斜线退火对掺氮切克劳斯基硅片中氧沉淀剥蚀区形成的影响
2. The effect of the ramping rate on oxygen precipitation and the denuded zone in heavily doped Czochralski silicon [J] . Zhao YY., Li DS., Ma XY., Journal of Physics. Condensed Matter . 2004,第9期

机译：斜率对重掺杂切克劳斯基硅中氧沉淀和剥蚀区的影响
3. Correlation between Copper Precipitation and Grown-In Oxygen Precipitates in 300 mm Czochralski Silicon Wafer [J] . P. Dong, X.Y. Ma, D. Yang Acta Physica Polonica . 2014,第4期

机译：300 mm Czochralski硅晶片中铜沉淀与生长的氧沉淀之间的相关性
4. Oxygen precipitation behavior in 300 mm polished czochralski silicon wafers [C] . T. Ono, G. A. Rozgonyi, C. Au, International symposium on high purity silicon;Meeting of the Electrochemical Society . 1998

机译：300毫米抛光czochralski硅晶片中的氧沉淀行为
5. Modeling of oxygen precipitation in Czochralski silicon. [D] . Wei, Pengfei. 2002

机译：切克劳斯基硅中氧沉淀的模型。
6. Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing [O] . Zhishan Yuan, Chengyong Wang, Ke Chen, 2017

机译：通过退火在氧化硅膜上生长的非晶硅纳米线
7. Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon [O] . Xinpeng Zhang, Chao Gao, Maosen Fu, 2013

机译：快速热处理对重型砷和锑的氧气沉淀的影响掺杂Czochralski硅
8. Carbon-Oxygen Complexes as Nuclei for the Precipitation of Oxygen in Czochralski Silicon. [R] . Oehrlein, G. S., Lindstrom, J. L., Corbett, J. W. 1981

机译：碳氧复合物作为Czochralski硅中氧沉淀的核。

Oxygen precipitation in Czochralski silicon: Effect of ramped anneal from 300 to 750 ℃

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