机译:X射线光电子能谱研究热退火对铝酸镧在硅上能带取向的影响
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore;
Institute of Materials Research and Engineering, A~*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602;
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore;
Institute of Materials Research and Engineering, A~*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602;
Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Street 2, Singapore 738406, Singapore;
机译:X射线光电子能谱法测定TiO2 / FTO界面的能带对准:退火的影响
机译:硬X射线光电子谱对硅帽退火4H-SIC表面的带节能估计
机译:由硬X射线光电子能谱研究的非极性ALN / MNS界面处的带对准
机译:X射线反射率和X射线光电子谱研究的沉积后退火下HFO_2膜的厚度变化
机译:对III-V族化合物半导体的等离子退火(等离子沉积,硅氮化物,离子注入)进行俄歇电子和X射线光电子能谱研究。
机译:硬X射线光电子能谱和X射线吸收精细结构探测的(GaIn)(NAs)上的退火诱导的原子重排
机译:通过X射线光电子能谱确定TiO2 / FTO界面的带对准:退火的影响