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Frontiers of Characterization and Metrology for Nanoelectronics

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1.Nanomechanical Characterization and Metrology for Low-k and ULK Materials

机译：低k和ULK材料的纳米力学表征和计量
- 作者：Ude D. Hangen;Kong-Boon Yeap;David Vodnick;Ehrenfried Zschech;Han Li;Joost Vlassak
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Low-k;
- ULK;
- porosity;
- hardness;
- modulus;
- scratch;
- adhesion;
2.Nanocharacterization Challenges in a Changing Microelectronics Landscape

机译：变化微电子景观中的纳米特征挑战
- 作者：Michel Brillouet
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- More Moore;
- More-than-Moore;
- heterogeneous integration;
- 3D integration;
- nanocharacterization;
3.Standards for Nano-Enabled Applications of Electronics: Perspectives from IEC

机译：支持纳米电子应用标准：IEC的透视
- 作者：Norbert Fabricius
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Standardization;
- nanostandards;
- nanoelectronics;
- nano-electrotechnology;
- nanomanufacturing;
- nano-enabled products;
- nano-subassemblies;
4.Overview of Mask Metrology

机译：面具计量概述
- 作者：Bryan J. Rice;Vibhu Jindal;C.C. Lin;Jenah Harris-Jones;Hyuk Joo Kwon;Hsing-Chien Ma;Michael Goldstein;Yau-Wai Chan;Frank Goodwin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- EUV Mask Defect Reduction;
- EUV Lithography;
- EUV mask blank defect failure analysis;
- defect characterization;
5.Electrical Characterization of Resistive Switching Memories

机译：电阻切换存储器的电气表征
- 作者：An Chen;Ming-Ren Lin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Resistive switching memory;
- RRAM;
- memory characterization;
- reliability;
6.More than Moore or More Moore: a SWOT analysis

机译：不仅仅是摩尔或更多摩尔：SWOT分析
- 作者：G. Dan Hutcheson;Herbert S. Bennett
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- semiconductors;
- Moore's law;
- More than Moore;
- More Moore;
- SWOT analysis;
- scaling trends;
- MEMS;
- NEMS;
- 3D packaging;
- bioelectronics;
- emergent technologies;
- measurements;
- standards;
7.Fundamental Limits of Optical Patterned Defect Metrology

机译：光学图案缺陷计量的基本限制
- 作者：Richard M. Silver;Bryan M. Barnes;Yeung-Joon Sohn;Hui Zhou;Jing Qin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- defect metrology;
- differential imaging;
- optical scattering;
- electromagnetic simulation;
- DUV microscopy;
8.Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

机译：由3D IC TSV包装在高级半导体器件性能中引起的应力诱导的效果
- 作者：V. Sukharev;A. Kteyan;J-H Choy;H. Hovsepyan;A. Markosian;E. Zschech;R. Huebner
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- 3D IC;
- TSV;
- stress;
- strain engineering;
- layout;
- packaging;
- FEA;
9.Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs

机译：超过生物电形的摩尔的边界和所需的计量需求
- 作者：Anthony Guiseppi-Elie;Christian Kotanen;A. Nolan Wilson
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- biocompatibility;
- biointerfaces;
- bioelectronics;
- bionics;
- Moore;
10.Field Mapping Of Semiconductors In A State-Of-The-Art Electron Microscope.

机译：最先进的电子显微镜中半导体的场映射。
- 作者：David Cooper;Armand Beche;Jean-Luc Rouviere;Germain Servanton;Roland Pantel;Pierre Morin;Amal Chabli
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Field Mapping;
- Electron Holography;
- Strain;
- Dopant Profiling;
- Semiconductors;
11.Preface: Frontiers of Characterization and Metrology for Nanoelectronics: 2011

机译：前言：纳米电子学的表征和计量前沿：2011
- 作者：David G. Seiler;Alain C. Diebold;Robert McDonald;Amal Chabli;Erik M. Secula
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
12.TSOM Method for Nanoelectronics Dimensional Metrology

机译：纳米电子尺寸计量的TSOM方法
- 作者：Ravikiran Attota
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Nanometrology;
- nanomanufacturing;
- dimensional metrology;
- defect analysis;
- process control;
- critical dimensions;
- optical microscope;
- through-focus;
- MEMS;
- NEMS;
- overlay;
- FinFet;
- TSV;
- photonics;
- nanodots;
- nanowires;
13.Multi-technique Approach for the Evaluation of the Crystalline Phase of Ultrathin High-k Gate Oxide Films

机译：超薄高k型氧化膜结晶相的多技术方法
- 作者：E. Bersch;J. D. LaRose;I. Wells;S. Consiglio;R. D. Clark;G. J. Leusink;R. J. Matyi;A. C. Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
14.Metrology and Failure Analysis for 3D IC Integration

机译：3D IC集成的计量与故障分析
- 作者：Ehrenfried Zschech;Alain Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Metrology;
- Failure Analysis;
- 3D IC Integration;
- TSV;
15.Nanoelectronics and More-than-Moore at IMEC

机译：IMEC的纳米电子和摩尔更多
- 作者：Rudi Cartuyvels;Serge Biesemans;Wilfried Vandervorst;Jo De Boeck
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- CMOS scaling;
- 3D Technologies;
- Heterogeneous Integration;
- MEMS;
- Si nano-photonics;
16.Advances in CD-Metrology (CD-SAXS, Mueller Matrix based Scatterometry, and SEM)

机译：CD-Metrology（CD-SAXS，基于Mueller矩阵的散射测定法和SEM）的进展
- 作者：Bradley L. Thiel;Aron J. Cepler;Alain C. Diebold;Richard J. Matyi
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- CD-SEM;
- CD-SAXS;
- Scatterometry;
- Mueller matrix;
17.Hybrid Metrology 3D-AFM Enhancement for CD Metrology Dedicated to 28 nm Node and Below Requirements

机译：杂交计量和3D-AFM增强CD Metrology专用于28 NM节点及以下要求
- 作者：J. Foucher;P. Faurie;L. Dourthe;B. Irmer;C. Penzkofer
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- hybrid metrology;
- 3D-AFM;
- CD-SEM;
- Accuracy;
- Precision;
- Probe;
- Carbon;
18.Overview of Optical Metrology of Advanced Semiconductor Materials

机译：高级半导体材料光学计量概述
- 作者：Vimal K. Kamineni;A. C. Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Spectroscopic ellipsometry;
- dielectric function;
- optical metrology;
- refractive index;
19.Advanced Use of Therma-Probe for Ultra-Shallow Junction Monitoring

机译：用于超浅结监测的热A探头的高级使用
- 作者：Janusz Bogdanowicz;Trudo Clarysse;Gerrit Smets;Erik Rosseel;Wilfried Vandervorst
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Silicon;
- Electrical Characterization;
- Nondestructive;
- Ion-Implantation;
20.Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing

机译：应用于硅装置处理污染的痕量金属的高级监测
- 作者：P. Maillot;C. Martin;A. Planchais
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Metallic contamination;
- silicon devices;
- VPD ICP-MS;
- SPV;
- TXRF;
21.Metrology and Characterization Challenges for Emerging Research Materials and Devices

机译：新兴研究材料和设备的计量与特征挑战
- 作者：C. Michael Garner;Dan Herr;Yaw Obeng
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
22.Line Edge Roughness of Directed Self-Assembly PS-PMMA Block Copolymers - A Candidate for Future Lithography

机译：定向自组装PS-PMMA块共聚物的线边缘粗糙度 - 未来光刻的候选者
- 作者：Chengqing Wang;Gila E. Stein;August W. Bosse;Wen-li Wu
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- directed self assembly;
- block copolymers;
- line edge roughness;
- lithography;
- X-ray scattering;
23.A Method for USJ Process Control

机译：USJ过程控制方法
- 作者：Edward Tsidilkovski
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Ultra-Shallow Junctions;
- In-Situ;
- Real-Time Control and Monitoring;
- Novel Measurement Methods;
24.Recent Advances In 2D-Band Structure Imaging By k-PEEM and Prospects For Technological Materials

机译：K-PEEM和技术材料前景的2D频段结构成像的最新进展
- 作者：C. Mathieu;O. Renault;H. Rotella;N. Barrett;A. Chabli
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Energy filtered PEEM;
- k-PEEM;
- monocrystalline materials;
- band structures;
25.Advanced Metrologies for Topography and Thickness Measurements

机译：用于地形和厚度测量的高级计量
- 作者：G. Riou;P. Acosta;M. Darwin;B. Kamenev
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Optical profilometry;
- transparent films;
- film thickness;
26.Measurement of Nanograin Orientations: Application to Cu Interconnects

机译：纳米纹取向的测量：在Cu互连的应用
- 作者：G. Brunetti;R. Galand;J.L. Rouviere;L. Clement;C. Cayron;E.F. Rauch;D. Robert;J.F. Martin;F. Bertin;A. Chabli
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- TEM precession scanning;
- Cu interconnect;
- void localization;
27.Ultimate Backside Sample Preparation For Ultra Thin High-k/Metal Gate Stack Characterization

机译：超薄高k /金属栅极堆叠表征的终极背面样品制备
- 作者：M. Py;M. Veillerot;E. Martinez;J.M. Fabbri;R. Boujamaa;J.P. Barnes;F. Bertin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Backside sample preparation;
- characterization;
- high-k metal gate;
28.Atomic Layer Deposited Al_2O_3 as Characterized Reference Samples for Nanolayer Metrology

机译：原子层沉积Al_2O_3作为纳米组计量的表征参考样品
- 作者：A. Nutsch;M. Lemberger;P. Petrik
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
29.Metrology Challenges for the Ultra-thin SOI

机译：超薄SOI的计量挑战
- 作者：Oleg Kononchuk;Gregory Riou;Roland Brun;Cecile Moulin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- SOI;
- FD MOSFET;
- Si thickness metrology;
30.Enhanced Spatial Resolution Electrical Scanning Probe Microscopy By Using Carbon Nanotube Terminated Tips

机译：使用碳纳米管封端的提示增强了空间分辨率电扫描探针显微镜
- 作者：Joseph J. Kopanski;Ilona Sitnitsky;Victor Vartanian;Paul McClure;Vladimir Mancevski
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- FINFET;
- carbon nanotube;
- scanning capacitance microscope;
- scanning Kelvin force microscope;
- scanning probe microscope;
31.MOTIS: A Focused Ion Beam Source Based On Laser-Cooled Atoms

机译：MOTIS：基于激光冷却原子的聚焦离子束源
- 作者：B. Knuffman;A. V. Steele;J. Orloff;M. Maazouz;J. J. McClelland
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Focused ion beam;
- ion microscopy;
- laser cooling;
32.Fourier Scatterometry for Characterization of Sub-wavelength Periodic Two Photon Polymerization Structures

机译：傅里叶散射测定法，用于亚波长周期两个光子聚合结构的表征
- 作者：K. Frenner;V. Ferreras Paz;S. Peterhansel;W. Osten;A. Ovsianikov;K. Obata;B. Chichkov
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Scatterometry;
- white-light-interference;
- two-photon polymerization;
33.A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology

机译：用于线路计量前端的新型X射线衍射和反射率工具
- 作者：M. Wormington;B. Yokhin;D. Berman;A. Krokhmal;I. Mazor;P. Ryan;J. Wall;R. Bytheway
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- X-ray diffraction;
- X-ray reflectivity;
- SiGe;
- Si:C;
- thin-films;
- composition;
- thickness;
- strain;
34.Observation of Work Functions, Metallicity, Band Bending, Interfacial Dipoles by EUPS for Characterizing High-k/Metal Interfaces

机译：用于表征高k /金属接口的EUP的工作功能，金属，带弯曲，界面偶极偶联
- 作者：Toshihisa TOMIE;Tomoaki Ishitsuka;Teruhisa Ootsuka;Hiroyuki Ota
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- EUPS;
- High-k/Metal Interface;
- work function;
- metallicity;
- band bending;
- interfacial dipole;
35.High Resolution Multiwavelength μ-Raman Spectroscopy for Nanoelectronic Material Characterization Applications

机译：用于纳米电子材料表征应用的高分辨率多波长μ-拉曼光谱
- 作者：Victor Vartanian;Takeshi Ueda;Toshikazu Ishigaki;Kitaek Kang;Woo Sik Yoo
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- multi-wavelength μ-Raman spectroscopy;
- Si_(1-x)Ge_x,Si;
- stress/strain;
- C implanted Si;
- annealing;
36.Thin Films Mechanical Characterization Using Colored Picosecond Acoustics

机译：使用彩色皮秒声学的薄膜机械表征
- 作者：Patrick EMERY
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thin films;
- Characterization;
- Elastic;
- Mechanical;
- Thin films stack;
37.Reliability Testing of Advanced Interconnect Materials

机译：高级互连材料的可靠性测试
- 作者：R. R. Keller;M. C. Strus;A. N. Chiaramonti;Y. L. Kim;Y. J. Jung;D. T. Read
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Carbon nanotubes;
- damascene copper;
- electrical testing;
- interconnect reliability;
- nanocarbon;
- thermal cycling;
- voids;
38.Current Voltage Characteristics through Grains and Grain Boundaries of High-k Dielectric Thin Films Measured by Tunneling Atomic Force Microscopy

机译：通过隧道原子力显微镜测量的高k介电薄膜的晶粒和晶界限的电流电压特性
- 作者：Katsuhisa Murakami;Mathias Rommel;Vasil Yanev;Anton J. Bauer;Lothar Frey
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Tunneling AFM (TUNA);
- high-k;
- grain and grain boundary;
39.Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

机译：通过深场电子全全息，TOF-SIMS和红外光谱研究研究的退火SI / SIGEC超晶图
- 作者：T. Denneulin;J.L. Rouviere;A. Beche;M. Py;J.P. Barnes;N. Rochat;J.M. Hartmann;D. Cooper
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- SiGeC;
- strain;
- holography;
40.Effects of Roughness on Scatterometry Signatures

机译：粗糙度对散射测定签名的影响
- 作者：M. Foldyna;T. A. Germer;B. C. Bergner
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Diffraction grating;
- Ellipsometry;
- Line edge roughness;
- Mueller matrix;
- Multi-azimuth method;
41.Thickness Variation of HfO_2 Films Under Post-Deposition Annealing Investigated By X-ray Reflectivity and X-ray Photoelectron Spectroscopy

机译：X射线反射率和X射线光电子谱研究的沉积后退火下HFO_2膜的厚度变化
- 作者：Yong-Qing Chang;Wei-En Fu
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thickness;
- HfO_2;
- SiO_2;
- ALD;
- XRR;
- XPS;
42.Micro Roughness Determination Of Periodic Microelectronics Structures Using Optical Far Field Measurements

机译：光学远场测量的微粗糙度测定周期性微电子结构
- 作者：Alexandre Vauselle;Philippe Maillot;Gaelle Georges;Carole Deumie
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- angle resolved scattering;
- atomic force microscopy;
- roughness spectrum;
- multiscale analysis;
43.Characterization Of Nanodevices By STEM Tomography

机译：茎断层扫描的纳米切断特征
- 作者：O. Richard;A. Vandooren;G. S. Kar;P. Van Marcke;H. Bender
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- nanodevices;
- electron tomography;
44.FIB/SEM Structural Analysis Of Through-Silicon-Vias

机译：通过硅通孔的FIB / SEM结构分析
- 作者：H. Bender;C. Drijbooms;A. Radisic
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Through silicon via;
- TSV;
- FIB/SEM;
45.Joint Research on Scatterometry and AFM Wafer Metrology

机译：散射测定法和AFM晶圆测量的联合研究
- 作者：Bernd Bodermann;Egbert Buhr;Hans-Ulrich Danzebrink;Markus Bar;Frank Scholze;Michael Krumrey;Matthias Wurm;Petr Klapetek;Poul-Erik Hansen;Virpi Korpelainen;Marijn van Veghel;Andrew Yacoot;Samuli Siitonen;Omar El Gawhary;Sven Burger;Toni Saastamoinen
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Scatterometry;
- CD metrology;
- AFM;
- reference standard;
- rigorous modelling;
- inverse diffraction problem;
46.Scanning He+ Ion Beam Microscopy and Metrology

机译：扫描HE +离子束显微镜和计量
- 作者：David C Joy
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Device Metrology;
- Helium Ion Microscope;
- charging;
- damage;
47.Positioning More Than Moore Characterization Needs and Methods within the 2011 ITRS

机译：在2011 ITRS中定位超过Moore特征需求和方法
- 作者：Mart Graef
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Heterogeneous integration;
- multidisciplinarity;
- design for reliability;
- More than Moore;
- ITRS;
48.Investigation of Boron Redistribution during Silicidation in TiSi_2 using Atom Probe Tomography

机译：采用原子探测断层扫描的TISI_2硅化过程中的硼再分配研究
- 作者：K. Wedderhoff;M. Ogiewa;A. Shariq;S. Teichert
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thin films;
- Silicidation;
- Atom Probe Tomography;
49.UV-Photoreflectance and Raman Characterization of Strain Relaxation in Si on Silicon-Germanium Films

机译：硅锗膜中Si中应变松弛的紫外光反射和拉曼
- 作者：Michael Current;Will Chism;Woo Sik Yoo;Victor Vartanian
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Photo-Reflectance;
- Raman;
- Silicon-Germanium;
- Strain;
50.Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS

机译：化学收集和ICPMS对硅晶片上贵金属的分析
- 作者：H. Fontaine;D. Hureau;M. Groz;D. Despois;C. Louis
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- VPD-DC-ICPMS;
- LPD-ICPMS;
- silver;
- platinum;
- gold;
51.The Protocol Of KFM Characterization On Cross-section Of CdS/CdTe Thin Film Solar Cell

机译：CDS / CDTE薄膜太阳能电池截面上KFM表征的协议
- 作者：L. You;N. Chevalier;S. Bernardi;E. Martinez;D. Mariolle;G. Feuillet;M. Kogelschatz;G. Bremond;A. Chabli;F. Bertin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- KFM;
- thin-film;
- CdTe/CdS solar cell;
- p-n heterojunction;
52.Characterization of Strain Induced by PECVD Silicon Nitride Films in Transistor Channels

机译：PECVD氮化硅膜在晶体管通道中诱导的菌株的表征
- 作者：R. Thomas;D. Benoit;L. Clement;P. Morin;D. Cooper;F. Bertin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- holography;
- transistor;
- stress;
- strain;
- CESL;
53.The Impact Of Organic Contamination On The Oxide-Silicon Interface

机译：有机污染对氧化硅界面的影响
- 作者：D. Codegoni;M. L. Polignano;L. Castellano;G. Borionetti;F. Bonoli;A. Nutsch;A. Leibold;M. Otto
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Organic Contamination;
- diethyl phthalate;
- MOS-DLTS;
- gate oxide integrity;
- GOI;
54.Characterization and Failure Analysis of 3D Integrated Systems using a novel plasma-FIB system

机译：新型等离子体FIB系统的3D集成系统的表征与故障分析
- 作者：Laurens Kwakman;German Franz;Maaike Margrete Visser Taklo;Armin Klumpp;Peter Ramm
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Plasma-FIB technology;
- 3D Integration;
- Failure Analysis;
- Chip access;
- TSV;
- Wafer to Wafer bonding;
55.Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The-Art Auger Nanoprobes

机译：BAM（Al / GaAs）和光伏样品使用最先进的螺旋桨纳压物的分析研究
- 作者：P. Yadav;M. Bouttemy;E. Martinez;J. Vigneron;O. Renault;P. Mur;D. Munoz;A. Etcheberry;A. Chabli
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- AES;
- SAM;
- SEM;
- Auger mapping;
- Photovoltaic;
- cross-section;
56.A Traceable Scatterometry Measurement of a Silicon Line Grating

机译：硅线光栅的可追踪散射测量测量
- 作者：Thomas A. Germer;Heather J. Patrick;Ronald G. Dixson
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Ellipsometry;
- Scatterometry;
- Silicon;
- Traceability;
57.SiC Epitaxial Layer Resistivity Monitoring; A look at Existing and Novel Electrical Methods

机译：SiC外延层电阻率监测;看现有和新颖的电气方法
- 作者：Robert J. Hillard;Edward Tsidilkovski
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- SiC;
- Electrical Measurements;
- EM-Probe;
- Carrier Density Profile;
- PCIV;
58.Overview of Mask Metrology

机译：面具计量概述
- 作者：Bryan J. Rice;Vibhu Jindal;C.C. Lin;Jenah Harris-Jones;Hyuk Joo Kwon;Hsing-Chien Ma;Michael Goldstein;Yau-Wai Chan;Frank Goodwin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- EUV Mask Defect Reduction;
- EUV Lithography;
- EUV mask blank defect failure analysis;
- defect characterization;
59.Electrical Characterization of Resistive Switching Memories

机译：电阻切换回忆的电气表征
- 作者：An Chen;Ming-Ren Lin
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Resistive switching memory;
- RRAM;
- memory characterization;
- reliability;
60.Stress-induced Effects Caused by 3D IC TSV Packaging in Advanced Semiconductor Device Performance

机译：在高级半导体器件性能中由3D IC TSV包装引起的应力诱导的效果
- 作者：V. Sukharev;A. Kteyan;J-H Choy;H. Hovsepyan;A. Markosian;E. Zschech;R. Huebner
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- 3D IC;
- TSV;
- stress;
- strain engineering;
- layout;
- packaging;
- FEA;
61.Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs

机译：超过生物电形的摩尔的边缘和所需的计量需求
- 作者：Anthony Guiseppi-Elie;Christian Kotanen;A. Nolan Wilson
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- biocompatibility;
- biointerfaces;
- bioelectronics;
- bionics;
- Moore;
62.Preface: Frontiers of Characterization and Metrology for Nanoelectronics: 2011

机译：序言：纳米电子学的表征和计量前沿：2011
- 作者：David G. Seiler;Alain C. Diebold;Robert McDonald;Amal Chabli;Erik M. Secula
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
63.TSOM Method for Nanoelectronics Dimensional Metrology

机译：纳米电子尺寸计量的TSOM方法
- 作者：Ravikiran Attota
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Nanometrology;
- nanomanufacturing;
- dimensional metrology;
- defect analysis;
- process control;
- critical dimensions;
- optical microscope;
- through-focus;
- MEMS;
- NEMS;
- overlay;
- FinFet;
- TSV;
- photonics;
- nanodots;
- nanowires;
64.Metrology and Failure Analysis for 3D IC Integration

机译：3D IC集成的计量与故障分析
- 作者：Ehrenfried Zschech;Alain Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Metrology;
- Failure Analysis;
- 3D IC Integration;
- TSV;
65.Multi-technique Approach for the Evaluation of the Crystalline Phase of Ultrathin High-k Gate Oxide Films

机译：超薄高k型氧化膜结晶相的多技术方法
- 作者：E. Bersch;J. D. LaRose;I. Wells;S. Consiglio;R. D. Clark;G. J. Leusink;R. J. Matyi;A. C. Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
66.Nanoelectronics and More-than-Moore at IMEC

机译：IMEC的纳米电子和摩尔更多
- 作者：Rudi Cartuyvels;Serge Biesemans;Wilfried Vandervorst;Jo De Boeck
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- CMOS scaling;
- 3D Technologies;
- Heterogeneous Integration;
- MEMS;
- Si nano-photonics;
67.Advanced Metrologies for Topography and Thickness Measurements

机译：用于地形和厚度测量的高级计量
- 作者：G. Riou;P. Acosta;M. Darwin;B. Kamenev
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Optical profilometry;
- transparent films;
- film thickness;
68.Atomic Layer Deposited Al_2O_3 as Characterized Reference Samples for Nanolayer Metrology

机译：原子层沉积Al_2O_3作为纳米组计量的表征参考样品
- 作者：A. Nutsch;M. Lemberger;P. Petrik
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
69.A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology

机译：用于线路计量前端的新型X射线衍射和反射率工具
- 作者：M. Wormington;B. Yokhin;D. Berman;A. Krokhmal;I. Mazor;P. Ryan;J. Wall;R. Bytheway
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- X-ray diffraction;
- X-ray reflectivity;
- SiGe;
- Si:C;
- thin-films;
- composition;
- thickness;
- strain;
70.High Resolution Multiwavelength μ-Raman Spectroscopy for Nanoelectronic Material Characterization Applications

机译：用于纳米电子材料表征应用的高分辨率多波长μ-拉曼光谱
- 作者：Victor Vartanian;Takeshi Ueda;Toshikazu Ishigaki;Kitaek Kang;Woo Sik Yoo
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- multi-wavelength μ-Raman spectroscopy;
- Si_(1-x)Ge_x;
- Si;
- stress/strain;
- C implanted Si;
- annealing;
71.Overview of Optical Metrology of Advanced Semiconductor Materials

机译：高级半导体材料光学计量概述
- 作者：Vimal K. Kamineni;A. C. Diebold
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Spectroscopic ellipsometry;
- dielectric function;
- optical metrology;
- refractive index;
72.Observation of Work Functions, Metallicity, Band Bending, Interfacial Dipoles by EUPS for Characterizing High-k/Metal Interfaces

机译：通过EUP观察工作功能，金属性，带弯曲，界面偶极偶联，用于表征高k /金属界面
- 作者：Toshihisa TOMIE;Tomoaki Ishitsuka;Teruhisa Ootsuka;Hiroyuki Ota
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- EUPS;
- High-k/Metal Interface;
- work function;
- metallicity;
- band bending;
- interfacial dipole;
73.Line Edge Roughness of Directed Self-Assembly PS-PMMA Block Copolymers - A Candidate for Future Lithography

机译：定向自组装PS-PMMA块共聚物的线边缘粗糙度 - 未来光刻的候选者
- 作者：Chengqing Wang;Gila E. Stein;August W. Bosse;Wen-li Wu
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- directed self assembly;
- block copolymers;
- line edge roughness;
- lithography;
- X-ray scattering;
74.Advanced Monitoring of Trace Metals Applied to Contamination Reduction of Silicon Device Processing

机译：应用于硅装置处理的污染污染金属的高级监测
- 作者：P. Maillot;C. Martin;A. Planchais
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Metallic contamination;
- silicon devices;
- VPD ICP-MS;
- SPV;
- TXRF;
75.Metrology and Characterization Challenges for Emerging Research Materials and Devices

机译：新兴研究材料和设备的计量和特征挑战
- 作者：C. Michael Garner;Dan Herr;Yaw Obeng
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
76.Advanced Use of Therma-Probe for Ultra-Shallow Junction Monitoring

机译：用于超浅结监测的热A探头的高级使用
- 作者：Janusz Bogdanowicz;Trudo Clarysse;Gerrit Smets;Erik Rosseel;Wilfried Vandervorst
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Silicon;
- Electrical Characterization;
- Nondestructive;
- Ion-Implantation;
77.Thin Films Mechanical Characterization Using Colored Picosecond Acoustics

机译：使用彩色皮秒声学的薄膜机械表征
- 作者：Patrick EMERY
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thin films;
- Characterization;
- Elastic;
- Mechanical;
- Thin films stack;
78.Analysis of the Noble Metals on Silicon Wafers by Chemical Collection and ICPMS

机译：化学收集和ICPMS硅晶片上贵金属分析
- 作者：H. Fontaine;D. Hureau;M. Groz;D. Despois;C. Louis
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- VPD-DC-ICPMS;
- LPD-ICPMS;
- silver;
- platinum;
- gold;
79.Characterization and Failure Analysis of 3D Integrated Systems using a novel plasma-FIB system

机译：新型等离子体FIB系统的3D集成系统的表征与故障分析
- 作者：Laurens Kwakman;German Franz;Maaike Margrete Visser Taklo;Armin Klumpp;Peter Ramm
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Plasma-FIB technology;
- 3D Integration;
- Failure Analysis;
- Chip access;
- TSV;
- Wafer to Wafer bonding;
80.Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The-Art Auger Nanoprobes

机译：BAM（Al / GaAs）和光伏样品使用最先进的螺旋桨纳压物的分析研究
- 作者：P. Yadav;M. Bouttemy;E. Martinez;J. Vigneron;O. Renault;P. Mur;D. Munoz;A. Etcheberry;A. Chabli
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- AES;
- SAM;
- SEM;
- Auger mapping;
- Photovoltaic;
- cross-section;
81.Joint Research on Scatterometry and AFM Wafer Metrology

机译：散射测定法和AFM晶圆测量的联合研究
- 作者：Bernd Bodermann;Egbert Buhr;Hans-Ulrich Danzebrink;Markus Bar;Frank Scholze;Michael Krumrey;Matthias Wurm;Petr Klapetek;Poul-Erik Hansen;Virpi Korpelainen;Marijn van Veghel;Andrew Yacoot;Samuli Siitonen;Omar El Gawhary;Sven Burger;Toni Saastamoinen
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Scatterometry;
- CD metrology;
- AFM;
- reference standard;
- rigorous modelling;
- inverse diffraction problem;
82.Thickness Variation of HfO_2 Films Under Post-Deposition Annealing Investigated By X-ray Reflectivity and X-ray Photoelectron Spectroscopy

机译：X射线反射率和X射线光电子谱研究的沉积后退火下HFO_2膜的厚度变化
- 作者：Yong-Qing Chang;Wei-En Fu
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thickness;
- HfO_2;
- SiO_2;
- ALD;
- XRR;
- XPS;
83.Annealed Si/SiGeC Superlattices Studied by Dark-Field Electron Holography, ToF-SIMS and Infrared Spectroscopy

机译：由暗野电子全息术，TOF-SIMS和红外光谱研究研究的退火SI / SIGEC超晶片
- 作者：T. Denneulin;J.L. Rouviere;A. Beche;M. Py;J.P. Barnes;N. Rochat;J.M. Hartmann;D. Cooper
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- SiGeC;
- strain;
- holography;
84.Characterization Of Nanodevices By STEM Tomography

机译：茎断层扫描的纳米切断特征
- 作者：O. Richard;A. Vandooren;G. S. Kar;P. Van Marcke;H. Bender
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- nanodevices;
- electron tomography;
85.Effects of Roughness on Scatterometry Signatures

机译：粗糙度对散射测定签名的影响
- 作者：M. Foldyna;T. A. Germer;B. C. Bergner
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Diffraction grating;
- Ellipsometry;
- Line edge roughness;
- Mueller matrix;
- Multi-azimuth method;
86.FIB/SEM Structural Analysis Of Through-Silicon-Vias

机译：通过硅通孔的FIB / SEM结构分析
- 作者：H. Bender;C. Drijbooms;A. Radisic
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Through silicon via;
- TSV;
- FIB/SEM;
87.Micro Roughness Determination Of Periodic Microelectronics Structures Using Optical Far Field Measurements

机译：光学远场测量的微粗糙度测定周期性微电子结构
- 作者：Alexandre Vauselle;Philippe Maillot;Gaelle Georges;Carole Deumie
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- angle resolved scattering;
- atomic force microscopy;
- roughness spectrum;
- multiscale analysis;
88.Positioning More Than Moore Characterization Needs and Methods within the 2011 ITRS

机译：在2011 ITRS中定位超过摩尔特征需求和方法
- 作者：Mart Graef
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Heterogeneous integration;
- multidisciplinarity;
- design for reliability;
- More than Moore;
- ITRS;
89.Investigation of Boron Redistribution during Silicidation in TiSi_2 using Atom Probe Tomography

机译：采用原子探测断层扫描的TISI_2硅化过程中硼再分配的研究
- 作者：K. Wedderhoff;M. Ogiewa;A. Shariq;S. Teichert
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- Thin films;
- Silicidation;
- Atom Probe Tomography;
90.SiC Epitaxial Layer Resistivity Monitoring; A look at Existing and Novel Electrical Methods

机译：SIC外延层电阻率监测; 看看现有和新颖的电气方法
- 作者：Robert J. Hillard;Edward Tsidilkovski
- 会议名称：《Frontiers of Characterization and Metrology for Nanoelectronics》 | 2011年
- SiC;
- Electrical Measurements;
- EM-Probe;
- Carrier Density Profile;
- PCIV;