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Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing

机译：等离子体处理中高级光刻胶材料表面粗糙度发展和网状化机理的实时研究

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摘要

Surface roughness development of photoresist (PR) films during low pressure plasma etching has been studied using real-time laser light scattering from photoresist materials along with ellipsometric and atomic force microscopy (AFM) characterization. We show that evolution of the intensity of light scattered from a film surface can be used to study the development of surface roughness for a wide range of roughness starting from subnanometer to few hundred nanometers. Laser light scattering in combination with ellipsometry and AFM is also used to study the reticulation mechanism of 193 and 248 nm PRs during argon plasma processing. We employ a three-layer model (modified layer, rough layer, and bulk film) of the modified PR surface (193 and 248 nm PRs) to simulate and understand the behavior of ellipsometric Ψ-△ trajectories. Bruggeman's effective medium approximation is employed to study the roughness that develops on the surface after reticulation. When the glass transition temperature of the organic materials is reached during Ar plasma processing, the PR films reticulate and roughness develops rapidly. Roughness development is more pronounced for 248 nm PR than for 193 nm PR. Simulation of Ψ-△ shows that the growth of roughness is accompanied by strong expansion in the materials, which is stronger for 248 nm PR than 193 nm PR. The leading factors responsible for reticulation are found to be compressive stress that develops in the modified surface layer as it is created along with strong molecular chain motion and expansion of the material when the temperature is increased past the glass transition temperature. Reticulation leads to a significantly different surface morphology for 248 nm PR as compared to 193 nm PR and can be related to differences in molecular structure and composition leading to different responses when a modified surface layer is formed by ion bombardment accompanying plasma etching.
机译：研究人员利用实时光从光致抗蚀剂材料散射的激光以及椭圆光度法和原子力显微镜（AFM）表征研究了低压等离子体蚀刻过程中光致抗蚀剂（PR）膜的表面粗糙度发展情况。我们表明，从薄膜表面散射的光强度的演变可用于研究从亚纳米到几百纳米的各种粗糙度的表面粗糙度的发展。结合椭圆光度法和AFM的激光散射还用于研究氩等离子体处理过程中193和248 nm PR的网状化机理。我们采用改性PR表面（193和248 nm PRs）的三层模型（改性层，粗糙层和块状膜）来模拟和理解椭偏Ψ-△轨迹的行为。使用布鲁格曼的有效介质近似来研究网状结构在表面上形成的粗糙度。当在Ar等离子处理过程中达到有机材料的玻璃化转变温度时，PR膜网状化，并且粗糙度迅速增大。与193 nm PR相比，248 nm PR的粗糙度发展更为明显。 Ψ-△的模拟表明，粗糙度的增长伴随着材料的强烈膨胀，对于248 nm PR来说，强度要比193 nm PR强。发现引起网状化的主要因素是当温度升高到超过玻璃化转变温度时，随着改性的表层产生的压应力，伴随着强烈的分子链运动和材料的膨胀。网状结构导致248 nm PR的表面形态与193 nm PR明显不同，并且可能与分子结构和组成的差异有关，当通过伴随等离子体蚀刻的离子轰击形成改性的表面层时，会导致不同的响应。

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  • 来源
    《Journal of Applied Physics》 |2009年第1期|205-213|共9页
  • 作者

    A. R. Pal; R. L. Bruce; F. Weilnboeck; S. Engelmann; T. Lin; M.-S. Kuo; R. Phaneuf; G. S. Oehrlein;

  • 作者单位

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA Material Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Garchuk, Guwahati-781035, India;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20742, USA;

    Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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