Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission

摘要

An antimonide-based InAs/GaSb/InSb short-period superlattice (SPSL) laser diode on GaSb substrate for mid-infrared emission has been modeled by an accurate eight-band k.p model. By using a realistic graded and asymmetric interface profile, calculated energy gap between the electron and heavy-hole miniband shows good agreement with our experimental data. Optical gain and threshold current density are then presented and compared with experimental results of SPSL laser diodes operating in pulsed regime. Analysis of the optical performances obtained at room temperature is made.