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Spin relaxation in n-type (111) GaAs quantum wells

机译:n型(111)GaAs量子阱中的自旋弛豫

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摘要

We investigate the spin relaxation limited by the D'yakonov-Perel' mechanism in n-type (111) GaAs quantum wells, by means of the kinetic spin Bloch equation approach. In (111) GaAs quantum wells, the in-plane effective magnetic field from the D'yakonov-Perel' term can be suppressed to zero on a special momentum circle under the proper gate voltage, by the cancellation between the Dresselhaus and Rashba spin-orbit coupling terms. When the spin-polarized electrons mainly distribute around this special circle, the in-plane inhomogeneous broadening is small and the spin relaxation can be suppressed, especially for that along the growth direction of quantum well. This cancellation effect may cause a peak (the cancellation peak) in the density or temperature dependence of the spin relaxation time. In the density (temperature) dependence, the interplay between the cancellation peak and the ordinary density (Coulomb) peak leads to rich features of the density (temperature) dependence of the spin relaxation time. The effect of impurities, with its different weights on the cancellation peak and the Coulomb peak in the temperature dependence of the spin relaxation, is revealed. We also show the anisotropy of the spin relaxation with respect to the spin-polarization direction.
机译:我们通过动力学自旋Bloch方程方法研究了n型(111)GaAs量子阱中受D'yakonov-Perel'机制限制的自旋弛豫。在(111)GaAs量子阱中,通过在Dresselhaus和Rashba自旋之间消除,在适当的栅极电压下,来自D'yakonov-Perel'项的面内有效磁场可以在特殊的动量圆上抑制为零。轨道耦合项。当自旋极化电子主要分布在该特殊圆周围时,面内不均匀展宽较小,并且可以抑制自旋弛豫,尤其是沿着量子阱生长方向的自旋弛豫。这种抵消效应可能导致自旋弛豫时间的密度或温度依赖性达到峰值(抵消峰)。在密度(温度)相关性中,消除峰与普通密度(库仑)峰之间的相互作用导致自旋弛豫时间的密度(温度)相关性的丰富特征。揭示了不同重量的杂质对自旋弛豫的温度依赖性的消除峰和库仑峰的影响。我们还显示了自旋弛豫相对于自旋极化方向的各向异性。

著录项

  • 来源
    《Journal of Applied Physics》 |2010年第9期|p.093709.1-093709.7|共7页
  • 作者

    B. Y. Sun; P. Zhang; M. W. Wu;

  • 作者单位

    Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China,Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;

    Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;

    Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China,Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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