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机译:n型(111)GaAs量子阱中的自旋弛豫
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China,Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;
Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China,Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;
机译:n型GaAs量子阱中的自旋弛豫时间,自旋相移时间和整体自旋相移时间
机译:具有瞬态自旋光栅的n型GaAs量子阱中的自旋弛豫
机译:非平衡声子对n型GaAs量子阱中热电子自旋弛豫的影响
机译:势垒厚度对(111)B取向InGaAs / GaAs双量子阱中塑性弛豫的影响
机译:N型半导体中SILICON-29的核自旋晶格弛豫。
机译:GaAs / AlGaAs量子阱中自旋弛豫的温度和电子密度依赖性
机译:001和111生长Gaas量子点中自旋轨道诱导电子自旋弛豫的各向异性