Photoluminescence of as-grown and thermal annealed SiO_x/Si-nanocrystals heterolayers grown by reactive rf sputtering

摘要

SiO_x/Si-nanocrystals (Si NCs) heterolayers were fabricated employing a rf magnetron sputtering system. The synthesis process, through modification of the oxygen partial pressure of the plasma, promotes the synthesis of stoichiometric SiO_2 layers and affect the Si NCs layer giving place to SiO_x/Si NCs (1.64