首页> 外国专利> Process for conditioning the target surface during sputtering of a substrate comprises separately heating the target surface before sputtering to thermally condition the target surface

Process for conditioning the target surface during sputtering of a substrate comprises separately heating the target surface before sputtering to thermally condition the target surface

机译:在基板的溅射过程中调节靶表面的方法包括在溅射之前分别加热靶表面以对靶表面进行热调节。

摘要

Process for conditioning the target surface (4) during sputtering of a substrate (6) comprises separately heating the target surface before sputtering to thermally condition the target surface so that a thermal effect on the conditioning of the target surface is prevented by heating the substrate during the sputtering process. An Independent claim is also included for a sputtering device for producing coated substrates comprising a cathode (2) having a target (3), a substrate with a substrate heater (7), and an anode (5). Preferred Features: The target surface is held at the same temperature level during the whole sputtering process.
机译:在衬底(6)的溅射过程中调节靶表面(4)的方法包括在溅射之前分别加热靶表面以对靶表面进行热调节,从而通过在加热过程中加热衬底来防止对靶表面的调节产生热效应。溅射工艺。还包括用于制造涂覆的衬底的溅射装置的独立权利要求,该涂覆的衬底包括具有靶材(3)的阴极(2),具有衬底加热器(7)的衬底和阳极(5)。首选功能:在整个溅射过程中,目标表面保持在相同的温度水平。

著录项

  • 公开/公告号DE10142831A1

    专利类型

  • 公开/公告日2003-03-13

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE2001142831

  • 发明设计人 KRUEGER URSUS;

    申请日2001-08-21

  • 分类号C23C14/34;H01J37/34;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:44

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