机译:降低界面杂质含量的GaN模板上AlGaN / GaN的高温分子束外延生长
Department of Materials, University of California, Santa Barbara, California 93106, USA Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching, Germany;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Materials, University of California, Santa Barbara, California 93106, USA;
机译:降低界面杂质含量的GaN模板上AlGaN / GaN的高温分子束外延生长
机译:氮化对分子束外延生长在GaN模板上的AlGaN / GaN结构再生界面的影响
机译:氮化对GaN模板上分子束外延生长的AlGaN / GaN结构再生界面的影响
机译:利用具有纳米管的AlGaN缓冲层通过分子束外延生长GaN外延生长
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:氧化物分子束外延在GaN模板上外延生长ZrO2