Deep levels in iron doped n- and p-type 4H-SiC

摘要

Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (E_C -0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (E_V + 0.97 eV and E_v+ 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fel, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.