Atomic layer deposited beryllium oxide: Effective passivation layer for Ⅲ-Ⅴ metal/oxide/semiconductor devices

摘要

Electrical and physical characteristics of the atomic layer deposited beryllium oxide (BeO) grown on the Si and GaAs substrates were evaluated as a barrier/passivation layer in the Ⅲ-Ⅴ devices. Compared to Al_2O_3, BeO exhibits lower interface defect density and hysteresis, and smaller frequency dispersion and leakage current density at the same effective oxide thickness, as well as an excellent self-cleaning effect. These dielectric characteristics combined with its advantageous intrinsic properties, such as high thermal stability, large energy band-gap(10.6 eV), effective diffusion barrier, and low intrinsic structural defects, make BeO an excellent candidate for the interfacial passivation layer applications in the channel Ⅲ-Ⅴ devices.