机译:分子束外延在GaAs上异质外延InSbN在长波长红外探测器上的退火研究
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA,Department of Electrical and Electronics Engineering, Sri Venkateswara College of Engineering, Sriperumbudur 602105, India;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA,Department of Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina 27401,USA;
Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, North Carolina 27411, USA,Department of Nanoengineering, North Carolina A&T State University, Greensboro, North Carolina 27401,USA;
机译:热退火对分子束外延生长InSbN性能的影响
机译:射频氮等离子体辅助分子束外延在GaAs上生长InSbN的性质
机译:气源分子束外延生长GaAs_(0.916)Sb_(0.084)和GaAs_(0.906)Sb_(0.075)N_(0.019)膜上的退火效应的压电反射和光反射研究
机译:分子束外延和金属有机气相外延生长的GaAs / AlGaAs量子阱红外光电探测器的比较研究
机译:通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光(MU-PL)研究
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响