机译:TaO_x纳米层在GeSe_x / W界面上对电阻开关存储性能的影响以及Cu纳米丝的研究
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan,Taiwan 333, Taiwan;
Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan,Taiwan 333, Taiwan;
Electronics and Opto-Electronic Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronic Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Electronics and Opto-Electronic Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan;
Electronics and Opto-Electronic Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
机译:GeSex / W界面上的TaOx纳米层对电阻开关存储性能的影响以及Cu纳米丝的研究
机译:Cu / Tao_x / PT电阻器件中Cu和氧空位纳丝纳丝的双极和单极切换的共存
机译:Cu-SE / Al2O3界面在Cu-Se纳米纳米中使用镧系金属纳米铝基原子开关的优异电阻切换性能
机译:Cu / TaO_x / Pt电阻切换存储器中汤姆森效应的研究
机译:多层薄膜磁阻存储元件的开关阈值研究
机译:在Cu / TaOx界面使用Ti纳米层具有出色的电阻记忆特性和开关机制
机译:在Cu / TaOx界面使用Ti纳米层具有出色的电阻记忆特性和开关机制
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。