机译:研究光电导率和场效应晶体管行为,以研究在真空和空气中掺杂硅的GaN纳米线中的漂移迁移率,表面损耗和瞬态效应
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA;
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA;
Department of Physics, Arizona State University, Tempe, Arizona 85287, USA;
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305, USA;
机译:开尔文探针力显微镜研究裂解的AlGaN / GaN高电子迁移率晶体管中的表面电势瞬变
机译:GaN纳米线中深能级的耗尽型光电导研究
机译:GaN纳米线中深能级的耗尽型光电导研究
机译:GaN缓冲层质量对AlGaN / GaN高电子迁移率晶体管的dc特性的影响的研究
机译:在线培训对机组人员监视行为的影响:一项现场研究
机译:高迁移率AlGaN / GaN场效应晶体管的仿真。迁移率和量子效应