机译:吸收层厚度和棒长对三维纳米棒薄膜氢化非晶硅太阳能电池性能的影响
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan;
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan;
机译:具有35 nm厚度的氢化非晶硅锗底部电池吸收层的纳米棒形态的超薄串联太阳能电池
机译:SiN x sub>阻挡层对掺杂聚酰亚胺Ga 2 sub> O 3 sub>掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
机译:p-i-n非晶硅薄膜太阳能电池结构中透明导电氧化物与氢化p型非晶碳化硅层的界面特性分析
机译:逐层制备硼掺杂氢化纳米晶硅薄膜及其在n-i-p柔性非晶硅薄膜太阳能电池中的应用
机译:带有图案化等离子体银纳米盘阵列的薄膜氢化非晶硅太阳能电池中太阳能转换效率的提高。
机译:SiNx阻挡层对聚酰亚胺Ga2O3掺杂的ZnO p-i-n氢化非晶硅薄膜太阳能电池性能的影响
机译:Role of siNx Barrier Layer on the performances of polyimide Ga2O3-doped ZnO p-i-n Hydrogenated amorphous silicon Thin Film solar Cells
机译:离子镀技术制备氢化非晶硅薄膜和薄膜太阳能电池的制备与表征。最终报告,1979年1月1日至1980年5月31日