Strain engineering in epitaxial La_(1-x)Sr_(1+x)MnO_4 thin films

摘要

We have synthesized epitaxial thin films of La_(1-x)Sr_(1+x)MnO_4 with x = 0.0 and a = 0.5 by pulsed laser deposition on NdGaO_3 and LaSrAlO_4 substrates with different lattice mismatch. X-ray analysis shows that these layered doped manganites can be grown fully strained allowing to tune the lattice degrees of freedom which otherwise are a function of chemical composition x. Since the crystal structure is strongly coupled to the magnetic, orbital, and charge degrees of freedom in the doped manganites, the demonstrated strain engineering is the base for an extrinsic control of, e.g., charge-orbital order.