Planar defects, dislocations, and coherently scattering-size in GdBa_2Cu_3O_(7-x)high-T_c thin films determined by high resolution X-ray diffraction

摘要

The frequency of planar defects, the average dislocation densities, and coherent domain size in epitaxial GdBa_2Cu_3O_(7-x) high T_c thin films, with altering CuO_2 and CuO planes, are measured by fitting full widths at half maximum values of 001 type reflections using a model function based on intensity distribution configurations in reciprocal space. The reduction of the dislocation density during oxygenation seems to be an unavoidable condition to obtain superconductivity in GdBa_2Cu_3O_(7-x) thin films.