机译:V形凹坑在InGaN / GaN多量子阱发光二极管中提高量子效率的作用
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China;
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China;
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China;
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China;
National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China;
机译:V形凹坑在InGaN / GaN多量子阱发光二极管中提高量子效率的作用
机译:V型坑面积比对蓝色InGaN / GaN多量子阱发光二极管量子效率的影响
机译:在InGaN / GaN多量子阱发光碘化物中使用故意形成的V形凹坑来提高效率和电性能
机译:V形凹坑密度对蓝色InGaN / GaN多量子阱发光二极管量子效率的影响:仿真
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:IngaN / GaN多量子孔绿发光二极管内部量子效率改进