Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting iodes

摘要

We demonstrate a high efficiency and an improvement of the electrical properties in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) using intentionally formed V-shaped pits. Efficiency droop behaviors are measured and LEDs with V-shaped pits act like LEDs with a low dislocation density. The reverse voltage at -10μA of LEDs with V-shaped pits shows -120 V, which is comparable to p-i-n rectifiers grown on a free-standing GaN, and reverse leakage current is decreased indicating electrical passivation of dislocation. A calculated diode ideality factor shows that electron tunneling at low forward voltage is suppressed in LEDs with V-shaped pits.