Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes

摘要

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes with different density and size of V-shaped pits are numerically investigated. Simulation results show that internal quantum efficiency is firstly enhanced and then reduced with an increase in the density and size of pits. It is found that the area ratio of pits accounting for the last QW is the key factor. The optimal value of area ratio is about 50 % at the current density of 35A/cm~2.