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机译:尺寸异常效应对非晶InGaZnO薄膜晶体管热不稳定性的影响
Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan,Advanced Optoelectronics Technology Center, National Cheng Rung University, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsin-chu 300, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan;
Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan;
Department of Electronics Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan;
Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-chu 300, Taiwan;
Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;
Advanced Display Technology Research Center, AU Optronics, No.1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsin-Chu 30078, Taiwan;
机译:顶部栅极偏置结构消除非晶InGaZnO薄膜晶体管中的负偏压照明应力不稳定性。
机译:使用反应性热蒸发方法制造二维MOS2薄膜晶体管与退火步骤结合
机译:Al-Insnzno薄膜晶体管的异常热不稳定性通过SiOx / Active界面的羟基诱导的氧空位
机译:用于面板上系统和三维集成电路的隧道薄膜晶体管的正偏置温度不稳定性
机译:高k电介质氧化锌薄膜晶体管的电不稳定性和界面电荷的研究。
机译:使用n型Al:ZnO和p型NiO薄膜晶体管的三维堆叠互补薄膜晶体管
机译:低温热退火对微晶硅薄膜晶体管性能的影响