Positive bias temperature instability of tunnel thin-film transistor for applications of system-on-panel and three-dimension integrated circuits

摘要

Positive bias temperature instability (PBTI) of tunnel thin-film transistor (TFT) with poly-Si channel film is proposed for the first time. The novel interband tunneling transport mechanism of tunnel-TFT results in special PBTI behavior. For PBTI at 75 °C with stress voltage 10 V, tunnel-TFT exhibit excellent PBTI immunity compared to conventional TFT. However, the degradation of tunnel-TFT is getting worse when the temperature of PBTI is reduced. It may be because the interband tunneling is more sensitive at low temperature due to the deep trap characteristics, which affects the transport behavior of tunneling electrons. It would be helpful for the development of tunnel transistors.