Fabrication of two-dimensional MoS2 thin-film transistors using a reactive thermal evaporation method combined with an annealing step

摘要

Two-dimensional (2-D) MoS2 films were fabricated by reactive thermal evaporation combined with thermal annealing. The 2-D nature of the MoS2 films is demonstrated by observation of direct transition and a Van Hove singularity in the absorbance curve. The 1T phase MoS2 is confirmed by X-ray photoelectron spectroscopy. MoS2 thin-film transistors (TFTs) are fabricated using the MoS2 active layer transferred onto an oxidized Si wafer from a sapphire wafer. The MoS2 TFT demonstrates a threshold voltage of 37.6V, a field-effect mobility of 6.94 cm(2)V(-1)s(-1) a sub-threshold swing of 29.2 V/dec and a switching ratio of 10(3).