机译:AlGaN / GaN子带内器件的相干垂直电子传输和界面粗糙度效应
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA,School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA,School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom;
Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB, United Kingdom;
机译:AlGaN / GaN高电子迁移率晶体管结构中二维电子气的全面磁输运特性,可评估界面粗糙度
机译:界面粗糙度和阱宽起伏引起的电子和声子散射对GaN / AlGaN中2DEG低场迁移率的影响
机译:等离子体增强原子层沉积AIN钝化对AlGaN / GaN异质结构中二维电子气输运行为的影响
机译:电信波长下的GaN / AlGaN子带间光电器件
机译:GaN-On-GaN垂直功率器件的电子显微镜表征= GaN-On-GaN垂直功率器件的电子显微镜表征
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:AlGaN / GaN子带内器件的相干垂直电子传输和界面粗糙度效应
机译:alGaN / GaN界面的缺陷形成和电子传输