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机译:增强空穴迁移率的最佳Ge / SiGe纳米鳍几何:来自原子模拟的技术极限
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;
School of Materials Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA;
机译:通过SIMOX技术制造的绝缘体上SiGe衬底上的应变Si MOSFET的电子和空穴迁移率增强
机译:在绝缘体上锗化硅(SGOI)上制造的应变硅/应变硅锗异质结构p-MOSFET中的空穴迁移率增强
机译:Ge / SiGe异质结构中二维空穴气体迁移率的上限
机译:使用应变硅,SiGe技术增强空穴迁移率
机译:能量亲和力和最佳几何形状的合并,以提高多孔材料中的氢存储量:基于从头算的多尺度模拟
机译:通过控制前体原子密度以进行固相结晶而形成的绝缘体上的高空穴迁移率多晶Ge
机译:平面磁场对孔回旋加速器质量的影响和$ g_z $因子 在高迁移率siGe / Ge / siGe结构中