机译:InP衬底上的宽带隙,应变平衡量子阱隧道结
The George Washington University, Washington, DC 20037, USA,US Naval Research Laboratory, Washington, DC 20375, USA;
US Naval Research Laboratory, Washington, DC 20375, USA;
Sotera Defense Solutions, Annapolis Junction, Maryland 20701, USA,US Naval Research Laboratory, Washington, DC 20375, USA;
Sotera Defense Solutions, Annapolis Junction, Maryland 20701, USA,US Naval Research Laboratory, Washington, DC 20375, USA;
US Naval Research Laboratory, Washington, DC 20375, USA;
US Naval Research Laboratory, Washington, DC 20375, USA;
University of Cadiz, 11510, Puerto Real, Cadiz, Spain;
University of Cadiz, 11510, Puerto Real, Cadiz, Spain;
University of Cadiz, 11510, Puerto Real, Cadiz, Spain;
US Naval Research Laboratory, Washington, DC 20375, USA;
机译:在InP衬底上生长的无缺陷100层应变平衡InAs量子点结构
机译:INP和INP-on-SI衬底上的原子层分子束外延生长的INP隧道结
机译:InP多结太阳能电池具有高峰值隧道电流和低吸收的双量子阱隧道结
机译:晶格匹配的三结太阳能电池在InP衬底上宽带隙InAlAsSb的分子束外延
机译:量子霍尔隧道结:Luttinger液体物理学,量子相干效应和分数量子数。
机译:使用简单的基板倾斜方法在InP(111)B基板上自催化InP / InAs / InP一维纳米结构的拉曼光谱表征
机译:超宽带隙alGaN隧道结的设计与演示
机译:(100)和(111)B Inp衬底上的高效,深结,外延Inp太阳能电池