TYPE-II HIGH BANDGAP TUNNEL JUNCTIONS OF INP LATTICE CONSTANT FOR MULTIJUNCTION SOLAR CELLS

摘要

There exists a need for a tunnel junction of InP lattice constant thatprovidesfor improved peak tunneling current with low optical and electrical losses.Accordingly, a tunnel junction is disclosed that comprises a p-doped tunnellayercomprising AlGaInAs; and an n-doped tunnel layer in contact with the p-dopedtunnellayer. The junction has an InP lattice constant and is optically transparent,forming aheterojunction. The p-doped tunnel layer has a bandgap of greater than 1.25 eVandthe n-doped tunnel layer has a bandgap of greater than 1.35 eV. The n-dopedtunnellayer is also a window layer for a subcell underneath the tunnel junction.