Structural design and optimization of near-ultraviolet light-emitting diodes with wide wells

摘要

The characteristics of the near-ultraviolet (NUV) light-emitting diodes (LEDs) with wide (14-nm-thick) and narrow (2-nm-thick) wells under the situations of different numbers of wells and degree of polarization are systematically investigated. The simulation results show that the Auger recombination can be efficiently suppressed with the increase of number of wells in NUV LEDs. For the LEDs with wide wells, the quantum-confined Stark effect and Shockley-Read-Hall recombination play an important role when the number of wells increases, especially when the LED is under low current injection or high degree of polarization. In order to take the advantage of using wide wells, it is proposed that the quaternary Al_(0.1)In_(0.05)Ga_(0.85)N barriers be used in wide-well NUV LEDs along with the use of Al_(0.3)Ga_(0.7)N/Al_(0.1)Ga_(0.9)N superlattice electron-blocking layer to mitigate the polarization effect and electron overflow. With this band-engineering structural design, the optical performance of the wide-well NUV LEDs is much better than its thin-well counterpart even under the situation of high degree of polarization.