LIGHT-EMITTING DIODE COMPRISING AT LEAST ONE WIDER BANDGAP INTERMEDIATE LAYER PLACED IN AT LEAST ONE BARRIER LAYER OF THE LIGHT-EMITTING ZONE

摘要

Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an In_XGa_1-XN emitting layer able to form a quantum well, and two In_YGa_1-YN, where 0YX, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or In_WGa_1-WN, where 0WY, and the first layer includes In_VGa_1-VN, where VW0.