机译:重氮掺杂4H-SiC退火过程中双层肖克利堆垛层错的结构分析
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,DENSO Corporation, 500-1 Minamiyama, Komenoki, Nisshin, Aichi 470-0111, Japan,Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,SHOWA DENKO K.K., 1-13-9 Shibadaimon, Minato, Tokyo 105-8518, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan,Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan;
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan;
机译:4H-SiC p-i-n二极管正向电流退化中的界面位错和扩展的单个Shockley型堆垛层错的结构分析
机译:重氮掺杂4H-SiC晶体热退火过程中双Shockley堆垛层错周围部分的固定化现象
机译:4H-SiC PiN二极管中Shockley堆叠故障的热退火和传播
机译:围绕双震撼堆叠故障的偏离偏离掺杂4H-SIC晶体的偏离偏离的偏离的偏离现象
机译:叠加断层,变形孪生和马氏体相变的中尺度模型:将原子学与连续体联系起来
机译:具有均匀降解行为的高性能镁基生物材料的新视野:堆垛层错的形成
机译:4H-SiC外延层中的三重Shockley型堆垛层错