Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

摘要

The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.