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Comparative Study of Microstructure and Electrical Properties of Varistors Prepared from Plasma Vapor-Phase Reaction Process and French Process ZnO Powders

机译:等离子体气相反应法与法国法制备的ZnO粉压敏电阻的微观结构和电性能的比较研究

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摘要

Nano-ZnO powder was synthesized by the plasma vapor-phase reaction (PVPR) process. Most of the ZnO particles obtained are rod-like, with diameters of between 20 and 100 nm. ZnO-based varistors were fabricated by using the synthesized nano-ZnO powder and commercial French process submicrometer ZnO powder, respectively. The sintering activity of the samples prepared with the nano-ZnO powder is higher, but there is only a little difference between the mean grain sizes of the samples sintered at the same temperature. The current-voltage (I-V) characteristics in the low-current region are similar. However, when subjected to surge currents, the residual voltage ratio of the samples prepared using the PVPR ZnO powder is much lower. Comparative analysis of the dielectric property and the grain-boundary barrier height reveals that the donor concentration of the ZnO crystal grains in the sample prepared using the PVPR ZnO powder is higher than that prepared using French process ZnO powder. A higher donor concentration gives rise to a higher grain conductivity, a higher nonlinear coefficient in the high-current region and a better protection level in applications.
机译:通过等离子气相反应(PVPR)工艺合成了纳米ZnO粉体。获得的大多数ZnO颗粒是棒状的,直径在20至100nm之间。分别使用合成的纳米ZnO粉末和商业化的法国亚微米级ZnO粉末制造ZnO基压敏电阻。用纳米ZnO粉末制备的样品的烧结活性较高,但是在相同温度下烧结的样品的平均晶粒尺寸之间只有很小的差异。低电流区域中的电流-电压(I-V)特性相似。但是,当承受浪涌电流时,使用PVPR ZnO粉末制备的样品的残余电压比要低得多。介电性能和晶界势垒高度的比较分析表明,使用PVPR ZnO粉末制备的样品中ZnO晶粒的施主浓度高于采用法国工艺ZnO粉末制备的样品。施主浓度越高,晶粒电导率越高,大电流区域的非线性系数越高,应用中的保护水平越好。

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  • 来源
    《Journal of the American Ceramic Society》 |2011年第11期|p.3871-3876|共6页
  • 作者单位

    Department of Electronic Materials Science & Engineering, South China University of Technology, Guangzhou 510640, China;

    Department of Electronic Materials Science & Engineering, South China University of Technology, Guangzhou 510640, China;

    Department of Electronic Materials Science & Engineering, South China University of Technology, Guangzhou 510640, China;

    Department of Electronic Materials Science & Engineering, South China University of Technology, Guangzhou 510640, China;

    Department of Electronic Materials Science & Engineering, South China University of Technology, Guangzhou 510640, China;

    Yaohong Nanotechnology Company Ltd., Changde 415000, Hunan, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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