The Crystallization of Amorphous Aluminum Oxide Thin Films Grown on NiAl(100)

摘要

The crystallization of amorphous aluminum oxide thin films formed on NiAl(100) has been investigated using in-situ low energy electron microscopy, low energy electron diffraction, and scanning tunneling microscopy. It is found that both the annealing temperature and annealing time play crucial roles in the crystallization process. A critical temperature range of 450℃-500℃ exists for the crystallization to occur within a reasonably short annealing time. The initially uniform oxide film first becomes roughened, followed by coalescing into amor-phous-like oxide islands; further annealing results in the conversion of the amorphous oxide islands into crystalline oxide stripes. The density of the crystalline oxide stripes increases concomitantly with the decrease in the density of the amorphous oxide islands for annealing at a higher temperature or longer time.