Micromagnetic study of the write performance in dynamic-double and quad-interface magnetic tunnel junctions

摘要

We have studied the thermal stability and switching behavior of the recently proposed dynamic dual (DD-) magnetic tunnel junction (MTJ) with a fixed and a switchable reference layer and quad-interface (Quad-) MTJ with double-stacked free layers using micromagnetic simulation. We found that the upper free layer of the Quad-MTJ acts as a switchable reference layer with a considerably large saturation magnetization(M-s). We also found that both the thermal stability and switching time increase with an increase in theM(s)of the switchable reference layer. A detailed understanding of these characteristics is critical in order to use these MTJs as embedded memories.