Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory

摘要

A stacked magnetic tunnel junction (MTJ) structure of a multi-layer magnetic random access memory (MRAM) which includes a plurality of stacked MTJ devices serially connected to each other and an access transistor shared between the stacked MTJ devices. The stacked MTJ structure further includes a write word line through which a write current flows. The write current generates a hard axis magnetic field used to selectively write an MTJ device of the stacked MTJ devices.