Real-time curling probe monitoring of dielectric layer deposited on plasma chamber wall

摘要

A microwave resonator probe called a curling probe (CP) was applied to in situ monitoring of a dielectric layer deposited on a chamber wall during plasma processing. The resonance frequency of the CP was analytically found to shift in proportion to the dielectric layer thickness; the proportionality constant was determined from a comparison with the finite-difference time-domain (FDTD) simulation result. Amorphous carbon layers deposited in acetylene inductively coupled plasma (ICP) discharge were monitored using the CP. The measured resonance frequency shift dictated the carbon layer thickness, which agreed with the results from the surface profiler and ellipsometry. (c) 2018 The Japan Society of Applied Physics