Nanosheets and planar based on stacked double-channel with multi-gate thin-film transistor

摘要

This work demonstrates the stacked ten nanosheet-type double-channels with multi-gate thin-film transistor (stacked NS). For comparison, this work also fabricated the stacked planar device which top view width is equal to the stacked NS device. The stacked NS device shows superior electrical properties, including high driving current (10(-6) A um(-1)) and subthreshold slope (199 mV dec(-1)). Moreover, this work also discusses the variable temperature electrical properties and simulates the physical characteristics of the stacked devices. This stacked structure is fabricated through a simple process and has the large potential for the multilayer 3D stacked integrated applications. (C) 2019 The Japan Society of Applied Physics