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Inner-wall modification of a commercial polymeric microfluidic chip using pulsed He/O_2 and Ar/O_2 μplasmas

机译:使用脉冲He / O_2和Ar / O_2质膜对商用聚合物微流控芯片进行内壁修饰

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Pulsed He/O-2 and Ar/O-2 miasmas were used to modify the postbonded microchannels of a commercial cyclic olefin copolymer microfluidic chip. The mu plasmas were generated throughout a 60-mm-long microchannel with a cross section of 340 x 86 mu m(2) at atmospheric pressure using Pt wire electrodes under discharge conditions of spark voltages of 8-8 kV and a pulse repetition frequency of 50 Hz with a duty ratio of 0.2%. From optical emission spectroscopy results, the electronic excitation temperature was estimated to be approximately 2.1 x 10(4)K for both He and Ar mu plasmas, and atomic oxygen radicals were increasingly produced with increasing O-2 gas concentration. The plasma-treated microchannel inner wall was analyzed by X-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. The wettability of the microchannel inner walls treated with both He/O-2 and Ar/O-2 shows the following tendencies; the wettability increased by about 4 times that of a raw microchannel at O-2 gas concentrations of 5-10% and then the wettability decreased with increasing O-2 gas concentration over 10%. It is found that the wetting property of the microchannels depends on both the oxygen polar groups, such as -C-O-, C=O, and COOK introduced onto the inner walls and the surface roughness due to plasma etching. (C) 2018 The Japan Society of Applied Physics
机译:使用脉冲He / O-2和Ar / O-2弥散症来修饰商用环烯烃共聚物微流体芯片的后键合微通道。在大气压下,使用Pt丝电极在放电电压为8-8 kV,脉冲重复频率为60毫秒的情况下,在整个60毫米长的微通道中产生mu等离子体,其横截面为340 x 86μm(2)。 50 Hz,占空比为0.2%。从光发射光谱学结果来看,He和Ar mu等离子体的电子激发温度估计约为2.1 x 10(4)K,随着O-2气体浓度的增加,原子氧自由基也越来越多。通过X射线光电子能谱,扫描电子显微镜和原子力显微镜分析经等离子体处理的微通道内壁。 He / O-2和Ar / O-2处理的微通道内壁的润湿性表现出以下趋势;当O-2气体浓度为5-10%时,润湿性增加了原始微通道的约4倍,然后随着O-2气体浓度增加10%以上,润湿性降低了。已经发现,微通道的润湿特性取决于引入内壁的两个氧极性基团,例如-C-O-,C = O和COOK,以及由于等离子体蚀刻引起的表面粗糙度。 (C)2018日本应用物理学会

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