首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)
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Effect of Molecular Weight of Surfactant in Nano Ceria Slurry on Shallow Trench Isolation Chemical Mechanical Polishing (CMP)

机译:纳米氧化铈浆料中表面活性剂的分子量对浅沟槽隔离化学机械抛光(CMP)的影响

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摘要

We examined the effect of the molecular weight of surfactants in ceria slurry during chemical mechanical polishing (CMP) for shallow trench isolation (STI). We found that for a surfactant with a higher molecular weight, the oxide removal rale decreased drastically as the surfactant concentration increased, but in the case of a lower molecular weight, it only slightly decreased. In addition, slurries whose surfactants had lower molecular weights maintained a higher nitride removal rate with increasing surfactant concentration. The results showed that the molecular weight and surfactant concentration have complex effects on the oxide removal rate and the oxide-to-nitride removal selectivity.
机译:我们检查了用于浅沟槽隔离(STI)的化学机械抛光(CMP)过程中二氧化铈浆料中表面活性剂分子量的影响。我们发现,对于具有较高分子量的表面活性剂,随着表面活性剂浓度的增加,氧化物的去除率会急剧下降,但是在较低分子量的情况下,其去除率仅略微降低。另外,随着表面活性剂浓度的增加,表面活性剂分子量较低的浆料保持较高的氮化物去除速率。结果表明,分子量和表面活性剂浓度对氧化物去除率和氧化物对氮化物的选择性具有复杂的影响。

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