Possible Deviation from the well-known Threshold Behavior of Field-Effect Doping Phenomenon in Extremely Thin Organic Semiconductor Layer

摘要

Field-effect doping in a metal/insulator/semiconductor/metal four-layer model indicates that the well-known threshold behavior Q ∝ (V_G - V_(th)), where Q is the induced charge and V_G and V_(th) are the bias voltage and its threshold value, respectively, should be realized even when the thickness of the semiconductor layer (d_s) is on the 10 nm scale. At the same time, however, this model suggests that the doping phenomenon deviates from this simple threshold behavior when the density of states is small and d_s is on the 1 nm scale.