New Scheme of Electrostatic Discharge Circuit Simulations Using Protection Device Model with Generated-Hole-Dependent Base Resistance

摘要

Circuit simulations are important for examining the design of electrostatic discharge (ESD) protections. A new scheme of ESD circuit simulations using an equivalent circuit model for metal oxide semiconductor (MOS) protection devices is introduced. Our equivalent circuit model, which includes generated-hole-dependent base resistance, properly describes the snapback characteristics of ESD protection devices and, thus, our scheme is applicable for designing ESD protection circuits. Simulation results using our scheme for the protection circuit with multifinger MOS devices agreed well with measured snapback characteristics. These results show the effectiveness of our ESD circuit simulation technology.