Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask

摘要

Selective embedded growth of 4H-SiC trenches in SiC(0001) substrates utilizing a carbon mask by chemical vapor deposition has been investigated. The SiC trenches have been successfully embedded, and the carbon mask is successfully removed by thermal oxidation. The growth rate inside the SiC trench region on the masked SiC substrates is three times higher than that on nonmasked planar SiC substrates. Micro-Raman scattering measurements reveal that the embedded region is homoepitaxial 4H-SiC.