Long-Period-Grating-Loaded Semiconductor Separate-Confinement Heterostructure Waveguide for Polarization-Independent Gain-Equalizing Device

Hiromasa TABUCHI; Toshitaka ABE; Kenichi TERADA; Katsuyuki UTAKA

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Long-Period-Grating-Loaded Semiconductor Separate-Confinement Heterostructure Waveguide for Polarization-Independent Gain-Equalizing Device

机译：极化独立增益均衡器件的长周期加载半导体分离约束异质结构波导

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摘要

We report the notch filtering characteristics of an InGaAsP/InP long-period-grating-loaded separate-confinement heterostructure waveguide for a polarization-independent gain-equalizing device. We discussed the structure design and confirmed the fundamental characteristics of the device experimentally.

机译：我们报告了InGaAsP / InP长周期光栅加载的独立约束异质结构波导的陷波滤波特性，用于偏振无关的增益均衡设备。我们讨论了结构设计并通过实验确认了该器件的基本特性。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第49期|p.L1488-L1490|共3页
作者
Hiromasa TABUCHI; Toshitaka ABE; Kenichi TERADA; Katsuyuki UTAKA;
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作者单位

School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
gain-equalizing; long-period grating; separate-confinement heterostoructure; polarization-independent; InGaAsP;

机译：增益均衡;长周期光栅;分界异质结构;偏振无关;InGaAsP;

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专利

1. Laser action in organic semiconductor waveguide and double-heterostructure devices [J] . V. G. Kozlov, V. Bulovic, P. E. Burrows, Nature . 1997,第6649期

机译：有机半导体波导和双异质结构器件中的激光作用
2. High-power semiconductor separate-confinement double heterostructure lasers [J] . Tarasov I.S. Quantum electronics . 2010,第8期

机译：高功率半导体分离限制双异质结构激光器
3. Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers [J] . Kurakake H., Uchida T. IEEE journal of selected topics in quantum electronics . 1997,第2期

机译：分离限制异质结构（SCH）层中的重组对半导体激光器温度特性的影响
4. Long-Period Grating Loaded Semiconductor Separate Confinement Heterostructure (SCH) Waveguide for Polarization-Independent Gain Equalizing Devices [C] . Toshitaka Abe, Hiromasa Tabuchi, Kenichi Terada, International Conference on Indium Phosphide and Related Material . 2005

机译：用于偏振无关的增益均衡装置的长周期光栅加载半导体单独的限制异质结构（SCH）波导
5. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. [D] . Chen, Eugene I-Chun. 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用。
6. Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application [O] . Chengcheng Xiao, Fang Wang, Yao Wang, -1

机译：SnO / Si（001）异质结构的层依赖型半导体金属跃迁及其器件应用
7. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices [O] . Chen Eugene I-Chun 1996

机译：含铝III-V半导体的选择性氧化：量子阱异质结构激光器和晶体管器件的特性和应用
8. AlInGaAs/AlGaAs Separate-Confinement Heterostructure Strained Single Quantum WellDiode Lasers Grown by Organometallic Vapor Phase Epitaxy [R] . Wang, C. A., Walpole, J. N., Missaggia, L. J., 1991

机译：有机金属气相外延生长的alInGaas / alGaas分离限制异质结构应变单量子阱二极管激光器

Long-Period-Grating-Loaded Semiconductor Separate-Confinement Heterostructure Waveguide for Polarization-Independent Gain-Equalizing Device

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