SEMICONDUCTOR LASER DIODE WITH AN ASYMMETRIC SEPARATE-CONFINEMENT HETEROSTRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The invention asymmetric SCH (Separate-Confinement Heterostructure) structure and to a method of manufacturing a semiconductor laser diode having a of that, the semiconductor laser diode according to the present invention is composed of InP-InGaAs-InGaAsP based on the InP. Semiconductor laser diodes are p- cladding layer, p-type first and the 2 SCH layers, such a p-type p-InP which is inserted between the first and the insertion layer 2 SCH layers, emitting a laser beam, and a plurality of barrier layers and a plurality an active layer comprising a well layer of, n-type first and the 2 SCH layers, n-type layer within the insert to claim 1 SCH 2 SCH layer and the second n-type InGaAsP to be inserted into the interface layer, and includes n- cladding layer . A semiconductor laser diode manufacturing method comprising the steps of forming the n- cladding layer on a substrate, forming a first n-type cladding layer 2 SCH layer on n-, n-type of claim 1 SCH 2 SCH n-type layer on the first layer forming, n-type forming an active layer on claim 1 SCH layer, forming a p-type of claim 1 SCH layer on the active layer, p-type forming a p-InP layer on the insert 1 SCH layer, forming a first p-InP layer 2 SCH p-type layer on the insert, and a step of forming a p- layer on a p-type cladding layer of claim 2 SCH. Here, the formation of the n-type Claim 1 SCH layer, InGaAsP layer insert is inserted into the n-type layer of claim 1 SCH.