Effect of Capacitance-Voltage Sweep on the Flat-Band Voltage of Metal-Oxide-Semiconductor Device with High-k Gate Dielectric

摘要

The capacitance-voltage (C-V) characteristics with and without light illumination were evaluated for a capacitor with a Pt gate on the atomic-layer-deposited HfO_2 dielectric. The flat-band voltage (V_(fb)) is conventionally determined by a C-V curve. However, the extracted values of V_(fb), were dependent on the C-V sweep direction and the starting voltage of the sweep (V_(start)). The increasing differences between V_(start) and intrinsic V_(fb) (V_(fb,i)) results in the increasing deviations of V_(fb) from V_(fb,i). Therefore, the value of V_(start) should be close to V_(fb,i) and different values of V_(start) must be applied to the devices with significantly different V_(fb,i).