Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier

摘要

Magnetoresistive random access memory (MRAM) has recently attracted considerable attention due to its non-volatility and high programming speed. A high Tunnel magnetoresistance (TMR) ratio is a key factor of MRAM. However, a conventional MRAM using aluminum oxide as insulator film shows a low TMR ratio of several tens of percents. MgO tunneling insulator is one of the candidates for achieving a high TMR ratio. In this study, we fabricated and evaluated Magnetic tunnel junctions (MTJs) with MgO tunneling barrier on a clad Cu word line.